1 tm file number 4312.2 HGTG40N60C3R 75a, 600v, rugged, ufs series n-channel igbt this family of igbts was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. these devices demonstrate rugged performance capability when subjected to harsh short circuit withstand time (scwt) conditions. the parts have ultrafast (ufs) switching speed while the on-state conduction losses have been kept at a low level. the electrical speci?ations include typical turn-on and turn-off dv/dt ratings. these ratings and the turn-on ratings include the effect of the diode in the test circuit (figure 15). the data was obtained with the diode at the same t j as the igbt under test. formerly development type ta49049. symbol features 75a, 600v at t c = 25 o c 600v switching soa capability typical fall time at t j = 150 o c . . . . . . . . . . . . . . . . 170ns short circuit rating at t j = 150 o c. . . . . . . . . . . . . . . 10 s low conduction loss packaging jedec style to-247 ordering information part number package brand HGTG40N60C3R to-247 40n60c3r note: when ordering, use the entire part number. c e g e c g intersil corporation igbt product is covered by one or more of the following u.s. patents: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet june 2000 [ /title (hgt g40n6 0c3r) /sub- ject (75a, 600v, rug- ged, ufs series n- chan- nel igbt) /autho r () /key- words (inter- sil corpo- ration, semi- con- ductor, ava- lanche energy rated, switch ing power sup- plies, power caution: these devices are sensitive to electrostatic discharge; follow proper esd handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright intersil corporation 2000 obsolete pr oduct possible substitute pr oduct hgtg40n60c3
2 absolute maximum ratings t c = 25 o c, unless otherwise speci?d HGTG40N60C3R units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 75 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 40 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 200 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t c = 150 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ssoa 200a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 291 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c reverse voltage avalanche energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e arv 100 mj short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 10 s caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. v ce(pk) = 440v, t j = 150 o c, r g = 3 ?. electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v collector to emitter leakage current i ces v ce = bv ces t c = 25 o c - - 250 a t c = 150 o c - - 4.0 ma collector to emitter saturation voltage v ce(sat) i c = i c110 , v ge = 15v t c = 25 o c - 1.8 2.2 v t c = 150 o c - 2.0 2.5 v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge 4.5 6.2 7.5 v gate to emitter leakage current i ges v ge = 20v - - 100 na switching soa (see figure 2) ssoa t j = 150 o c, r g = 3 ? , v ge = 15v, v ce(pk) = 600v, l = 100 h 200 - - a gate to emitter plateau voltage v gep i c = i c110 , v ce = 0.5 bv ces - 9.8 - v on-state gate charge q g(on) i c = i c110 , v ce = 0.5 bv es v ge = 15v - 230 330 nc v ge = 20v - 330 430 nc current turn-on delay time t d(on)i t j = 150 o c i ce = i c110 v ce(pk) = 0.8 bv ces v ge = 15v r g = 3 ? l = 500 h diode used in test circuit rhrp30120 at 150 o c -56-ns current rise time t ri -75-ns current turn-off delay time t d(off)i - 265 500 ns current fall time t fi - 170 400 ns turn-off voltage dv/dt (note 3) dv ce /dt - 1.9 - v/ns turn-on voltage dv/dt (note 3) dv ce /dt - 6.8 - v/ns turn-on energy (note 4) e on - 3.5 - mj turn-off energy (note 5) e off - 2.5 - mj thermal resistance junction to case r jc - - 0.43 o c/w notes: 3. dv ce /dt depends on the diode used and the temperature of the diode. 4. turn-on energy loss (e on ) includes losses due to the diode recovery and is defined as the integral of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the collector voltage equals v ce (on). this value of e on was obtained with a rhrp30120 diode at t j = 150 o c. a different diode or temperature will result in a different e on . for example with diode at t j =25 o c, e on is about one half the value of e on with diode at t j =150 o c. 5. turn-off energy loss (e off ) is de?ed as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. HGTG40N60C3R
3 typical performance curves figure 1. dc collector current vs case temperature figure 2. switching safe operating areas figure 3. operating frequency vs collector to emitter current figure 4. collector to emitter on-state voltage figure 5. turn-on energy loss vs collector to emitter current figure 6. turn-off energy loss vs collector to emitter current i ce , dc collector current (a) t c , case temperature ( o c) 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 v ge = 15v package limit v ce(pk) , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 25 50 75 125 0 100 200 300 400 500 600 700 100 150 175 200 225 t j = 150 o c, r g = 3 ? , v ge = 15v, l = 100 h parts may current limit in this region i ce , collector to emitter current (a) f max , operating frequency (khz) 30 100 20 10 1 10 30 20 100 f max2 = (p d - p c )/(e on + e off ) p d = allowable dissipation p c = conduction dissipation f max1 = 0.05/(t d(off)i + t d(on)i ) (duty factor = 50%) r jc = 0.43 o c/w v ge = 15v 40 50 200 t c = 75 o c t c = 110 o c t j = 150 o c, r g = 3 ? , l = 500 h, v ce(pk) = 480v i ce , collector to emitter current (a) 100 26 410 125 v ce , collector to emitter voltage (v) 75 150 175 200 8 0 t c = 25 o c t c = 150 o c t c = -55 o c 0 25 50 225 13579 250 v ge = 15v pulse duration = 250 s duty cycle <0.5% i ce , collector to emitter current (a) e on , turn-on energy loss (mj) 70 110 50 10 4 8 12 30 90 16 20 0 t j = 150 o c, r g = 3 ? , l = 500 h, v ce(pk) = 480v v ge = 15v i ce , collector to emitter current (a) e off , turn-off energy loss (mj) 10 30 50 70 90 110 2 4 6 8 10 12 0 t j = 150 o c, r g = 3 ? , l = 500 h, v ce(pk) = 480v v ge = 15v HGTG40N60C3R
4 figure 7. turn-on delay time vs collector to emitter current figure 8. turn-on rise time vs collector to emitter current figure 9. turn-off delay time vs collector to emitter current figure 10. turn-off fall time vs collector to emitter current figure 11. transfer characteristics figure 12. gate charge waveforms typical performance curves (continued) t d(on)i , turn-on delay time (ns) i ce , collector to emitter current (a) 10 30 70 90 54 57 60 63 110 51 69 50 66 t j = 150 o c, r g = 3 ? , l = 500 h, v ce(pk) = 480v v ge = 15v t ri , turn-on rise time (ns) i ce , collector to emitter current (a) 75 150 225 0 375 300 t j = 150 o c, r g = 3 ? , l = 500 h, v ce(pk) = 480v 10 30 70 90 110 50 v ge = 15v t d(off)i , turn-off delay time (ns) 10 30 i ce , collector to emitter current (a) 70 90 50 230 260 270 240 220 110 250 t j = 150 o c, r g = 3 ? , l = 500 h, v ce(pk) = 480v, v ge = 15v i ce , collector to emitter current (a) t fi , fall time (ns) 140 30 50 70 90 110 160 180 200 220 240 t j = 150 o c, r g = 3 ? , l = 500 h, 10 v ce(pk) = 480v, v ge = 15v 910 13 80 160 200 240 15 280 i ce , collector to emitter current (a) 8 7 6111214 v ge , gate to emitter voltage (v) 40 0 120 t c = 25 o c t c = 150 o c t c = -55 o c duty cycle <0.5%, v ce = 10v pulse duration = 25 s v ge , gate to emitter voltage (v) q g , gate charge (nc) 12 6 50 250 15 3 9 0 0 150 100 v ce = 400v v ce = 200v v ce = 600v 200 i g(ref) = 1ma, r l = 7.5 ? , t c = 25 o c HGTG40N60C3R
5 figure 13. igbt normalized transient thermal response, junction to case figure 14. capacitance vs collector to emitter voltage test circuit and waveforms figure 15. inductive switching test circuit figure 16. switching test waveforms typical performance curves (continued) 0.02 0.05 0.5 t 1 , rectangular pulse duration (s) 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 z jc , normalized thermal response 0.2 0.1 0.01 single pulse t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c v ce , collector to emitter voltage (v) 0510 0 2 4 c, capacitance (nf) 6 8 10 12 frequency = 400khz 15 20 25 c ies c oes c res r g = 3 ? l = 500 h v dd = 480v + - rhrp30120 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on HGTG40N60C3R
6 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?ccosorbd ld26 ?or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open-circuited or ?ating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a speci? application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 4, 5, 6, 7 and 9. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is de?ed by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other de?itions are possible. t d(off)i and t d(on)i are de?ed in figure 16. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm .t d(off) is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on ). the allowable dissipation (p d ) is defined by p d = (tj m -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on and e off are de?ed in the switching waveforms shown in figure 16. e on is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce x v ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). HGTG40N60C3R eccosorbd ? is a trademark of emerson and cumming, inc.
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